HM4443 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
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General Features
* VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
* High power and.
The HM4443 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.
General Features
* VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ V.
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